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IDH12G65C5 Silicon Carbide Diode

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Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev.2.2, 2012-12-10 Power Management & Multimark.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Tempe

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