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IAUC41N06S5L100
OptiMOS™-5 Power Transistor
Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
Product Summary VDS RDS(on),max ID
60 V 10 mW 41 A
PG-TDSON-8-33
1 1
Type IAUC41N06S5L100
Package
Marking
PG-TDSON-8-33 5N06L100
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Drain current
Symbol
Conditions
ID
V GS=10 V, Chip limitation1,2)
V GS=10V, DC current
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
T a=85 °C, V GS=10 V, R thJA on 2s2p 2,3) T C=25 °C, tp= 100 µs
I D=20 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissi
IAUC41N06S5L100 Datasheet
