Datasheet Details
| Part number | ESD112-B1-02EL |
|---|---|
| Manufacturer | Infineon |
| File Size | 852.94 KB |
| Description | TVS Diodes |
| Datasheet |
 ESD112-B1-02EL Datasheet
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Description
P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag.
Features
- ESD / transient protection of RF signal lines according to:.
- IEC61000-4-2 (ESD): ±20 kV (air/contact).
- IEC61000-4-4 (EFT): ±40 A (5/50 ns).
- IEC61000-4-5 (surge): ±3 A (8/20 μs).
- Maximum working voltage: VRWM ±5.3 V.
- Extremely low capacitance: CL = 0.2 pF (typical).
- Low clamping voltage: VCL = 29 V (typical) at IPP = 16 A.
- Very low reverse current IR < 1 nA typ.
- Very small form factor down to 0.62 x 0.32 x 0.31 mm.