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DF100R07W1H5FP_B54 - IGBT

Features

  • CoolSiC (TM) Schottky diode gen 5.
  • Increased blocking voltage capability up to 650V.
  • Low inductive design.
  • Low switching losses Mechanical Features.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • Solder contact technology.
  • Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Num.

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Full PDF Text Transcription

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DF100R07W1H5FP_B54 EasyPACK™ModulmitTRENCHSTOP™5H5undCoolSiC™DiodeundPressFIT/bereitsaufgetragenem ThermalInterfaceMaterial EasyPACK™modulewithTRENCHSTOP™5H5andCoolSiC™diodeandPressFIT/pre-appliedThermal InterfaceMaterial J TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • ErhöhteSperrspannungsfestigkeitauf650V • NiederinduktivesDesign • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • Lötverbindungstechnik • Thermisches Interface Material bereits aufgetragen VCES = 650V IC nom = 50A / ICRM = 100A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • Increasedbloc
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