Datasheet Details
- Part number
- BSZ160N10NS3G
- Manufacturer
- Infineon ↗
- File Size
- 272.02 KB
- Datasheet
- BSZ160N10NS3G_Infineon.pdf
- Description
- Power MOSFET
BSZ160N10NS3G Description
BSZ160N10NS3 G OptiMOSTM3 Power-Transistor .
BSZ160N10NS3G Features
* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC
BSZ160N10NS3G Applications
* Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 100 16 40 PG-TSDSON-8 V mΩ A
Type BSZ160N10NS3 G
Package PG-TSDSON-8
Marking 160N10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V
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