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BSZ110N08NS5 Metal Oxide Semiconductor Field Effect Transistor

BSZ110N08NS5 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V BSZ110N08NS5 Data Sheet Rev.2.1 Final Power Manag.
Features. Ideal for high frequency switching and sync. Optimized technology for DC/DC converters. Excellent gate char.

BSZ110N08NS5 Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free platin

BSZ110N08NS5 Applications

* Halogen-free according to IEC61249-2-21
* Higher solder joint reliability with enlarged source interconnection Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 11.0 mΩ ID 40 A Qoss 19 nC QG(0V. .10V) 15 nC TSDSON-8 FL (enlarged source

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