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BSZ086P03NS3G - Power MOSFET

BSZ086P03NS3G Description

BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor .

BSZ086P03NS3G Features

* single P-Channel in S3O8

BSZ086P03NS3G Applications

* 150 °C operating temperature
* V GS=25 V, specially suited for notebook applications
* Pb-free; RoHS compliant
* applications: battery management, load switching
* Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.6 -40 PG-T

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