Datasheet Details
- Part number
- BSC0511NDI
- Manufacturer
- Infineon ↗
- File Size
- 657.42 KB
- Datasheet
- BSC0511NDI-Infineon.pdf
- Description
- MOSFET
BSC0511NDI Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 25V 25V OptiMOS™5 Power MOSFET BSC0511NDI Data Sheet Rev.2.0 Fina.
BSC0511NDI Features
* Product Summary
* Dual N-channel OptiMOS™ MOSFET
* Optimized for high performance buck converters
* Logic level (4.5V rated)
VDS RDS(on),max
* 100% avalanche tested ID
BSC0511NDI Applications
* VGS=10 V VGS=4.5 V
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
VPhase
* Integrated monolithic Schottky-like diode
BSC0511NDI
Q1 Q2 25 25 V 2.8 1.0 mW 4.2 1.4 40 40 A
Type BSC0511NDI
Package PG-TISON-8
Marking 0511NDI
Maximum rati
📁 Related Datasheet
📌 All Tags