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BSB044N08NN3, BSB044N08NN3G Power MOSFET

BSB044N08NN3 Description

BSB044N08NN3 G OptiMOS™3 Power-MOSFET .

BSB044N08NN3 Features

* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Superior thermal resistance
* Dual sided cooling
* low parasitic inductance Product Summary VDS RDS(on),max ID 80 V 4.4 mW 90 A CanPAKTM M MG-WDSON-2
* L

BSB044N08NN3 Applications

* Compatible with DirectFET® package MN footprint and outline2) Type BSB044N08NN3 G Package MG-WDSON-2 Outline MN Marking 0208 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID V GS=10 V, T C=25 °C 90 V GS=10

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BSB044N08NN3, BSB044N08NN3G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BSB044N08NN3, BSB044N08NN3G
Manufacturer
Infineon ↗
File Size
896.04 KB
Datasheet
BSB044N08NN3G_Infineon.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: BSB044N08NN3, BSB044N08NN3G.
Please refer to the document for exact specifications by model.

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Power MOSFET Infineon
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