Datasheet4U.com

BGA735N16 - High Linearity Tri-Band LTE/UMTS LNA

Infineon

📥 Download Datasheet

BGA735N16 Datasheet Preview — Preview of BGA735N16 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BGA735N16
Manufacturer	Infineon
File Size	1.44 MB
Description	High Linearity Tri-Band LTE/UMTS LNA
Datasheet	BGA735N16-Infineon.pdf

BGA735N16 Product details

Description

. . .

Features

. . 7 2 Electrical Characteristics.
. . . 9 2.1 Absolute Maximum Ratings.
. . 9 2.2 Thermal Resistance.

📁 BGA735N16 Similar Datasheet

BGA7351 - high linearity Si variable gain amplifier (NXP)
BGA7024 - 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier (NXP)
BGA7027 - high linearity silicon amplifier (NXP Semiconductors)
BGA7124 - high linearity silicon amplifier (NXP)
BGA7127 - high linearity silicon amplifier (NXP)
BGA7130 - high linearity silicon amplifier (NXP)
BGA2001 - Silicon MMIC amplifier (NXP)
BGA2003 - Silicon MMIC amplifier (NXP)

Other Datasheets by Infineon

BGA734L16 - Low Power Tri-Band UMTS LNA
BGA711N7 - SiGe Bipolar 3G/3.5G/4G Single-Band LNA
BGA713N7 - Single-Band UMTS LNA
BGA715N7 - Silicon Germanium Low Noise Amplifier
BGA725L6 - Silicon Germanium Low Noise Amplifier
BGA728L7 - Broadband Low Noise Amplifier

Published: Mar 1, 2016 |