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BFR840L3RHESD Datasheet - Infineon

BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, .
BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any infor.

BFR840L3RHESD Datasheet (1.11 MB)

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Datasheet Details

Part number:

BFR840L3RHESD

Manufacturer:

Infineon ↗

File Size:

1.11 MB

Description:

Robust low noise silicon germanium bipolar rf transistor.

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BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar Transistor Infineon

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