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AUIRFSL4115 - Power MOSFET

Download the AUIRFSL4115 datasheet PDF. This datasheet also covers the AUIRFS4115 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   AUIRFS4115 AUIRFSL4115 HEXFET® Power MOSFET VDSS 150V RDS(on) typ. max. 10.3m 12.1m ID 99A DD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS4115-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFSL4010 Power MOSFET International Rectifier
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AUIRFSL3004 Power MOSFET International Rectifier
AUIRFSL3107 Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRFSL4127 Power MOSFET
AUIRFSL4127 Power MOSFET
AUIRFSL4310 Power MOSFET
AUIRFSL3004 Power MOSFET
AUIRFSL3107 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   AUIRFS4115 AUIRFSL4115 HEXFET® Power MOSFET VDSS 150V RDS(on) typ. max. 10.3m 12.1m ID 99A DD Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .