Datasheet4U Logo Datasheet4U.com

AUIRFSL3107 - Power MOSFET

Download the AUIRFSL3107 datasheet PDF. This datasheet also covers the AUIRFS3107 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Enhanced dV/dT and dI/dT capability.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS3107-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFSL3107 Power MOSFET International Rectifier
AUIRFSL3004 Power MOSFET International Rectifier
AUIRFSL3206 Power MOSFET International Rectifier
AUIRFSL3207Z Power MOSFET International Rectifier
AUIRFSL3307Z Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRFSL3004 Power MOSFET
AUIRFSL3206 Power MOSFET
AUIRFSL3607 Power MOSFET
AUIRFSL4115 Power MOSFET
AUIRFSL4127 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRFS3107 AUIRFSL3107 Features  Advanced Process Technology  Ultra Low On-Resistance  Enhanced dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Published: |