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AUIRFS4610 - Power MOSFET

Download the AUIRFS4610 datasheet PDF (AUIRFB4610 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Enhanced dV/dT and dI/dT capability.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFB4610-Infineon.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Infineon

Full PDF Text Transcription

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  AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 Features  Advanced Process Technology  Ultra Low On-Resistance  Enhanced dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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