AUIRF952Q - Dual N/P-Channel MOSFET

Infineon

AUIRF952Q Datasheet Preview — Preview of AUIRF952Q PDF

Datasheet Details

Part number	AUIRF952Q
Manufacturer	Infineon ↗
File Size	307.02 KB
Description	Dual N/P-Channel MOSFET
Datasheet	AUIRF952Q-Infineon.pdf

AUIRF952Q Product details

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

Advanced Planar Technology.
Low On-Resistance.
Logic Level Gate Drive.
Dual N and P Channel MOSFET.
Dynamic dv/dt Rating.
150°C Operating Temperature.
Fast Switching.
Full Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
S1 N-.

📁 AUIRF952Q Similar Datasheet

AUIRF9540N - Power MOSFET (International Rectifier)
AUIRF9952Q - Power MOSFET (International Rectifier)
AUIRF9Z34N - Power MOSFET (International Rectifier)
AUIRF1010Z - Power MOSFET (International Rectifier)
AUIRF1010ZL - Power MOSFET (International Rectifier)
AUIRF1010ZS - Power MOSFET (International Rectifier)
AUIRF1324 - Power MOSFET (International Rectifier)
AUIRF1324S-7P - Power MOSFET (International Rectifier)

Other Datasheets by Infineon

AUIRF1010EZ - Power MOSFET
AUIRF1010EZL - Power MOSFET
AUIRF1010EZS - Power MOSFET
AUIRF1324L - Power MOSFET
AUIRF1324S - Power MOSFET
AUIRF1404 - Power MOSFET

Published: Dec 1, 2016 |