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AUIRF7805Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level.
  • N Channel MOSFET.
  • Surface Mount.
  • Available in Tape & Reel.
  • 150°C Operating Temperature.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  AUTOMOTIVE GRADE AUIRF7805Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level  N Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.