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AUIRF7665S2 - Power MOSFET

Download the AUIRF7665S2 datasheet PDF. This datasheet also covers the AUIRF7665S2TR variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

Features

  • combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Base Part Number AUIRF7665S2 Package Type DirectFET Small Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number AUIRF7665S2TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond thos.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF7665S2TR-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7665S2TR N-Channel MOSFET International Rectifier
AUIRF7665S2TR1 N-Channel MOSFET International Rectifier
AUIRF7669L2TR Automotive DirectFET Power MOSFET International Rectifier
AUIRF7669L2TR1 Automotive DirectFET Power MOSFET International Rectifier
AUIRF7640S2TR DirectFET Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRF7665S2TR Power MOSFET
AUIRF7669L2TR Power MOSFET
AUIRF7640S2TR Power MOSFET
AUIRF7647S2TR Power MOSFET
AUIRF7648M2TR Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRF7665S2TR  Advanced Process Technology  Optimized for Class D Audio Amplifier Applications  Low Rds(on) for Improved Efficiency  Low Qg for Better THD and Improved Efficiency  Low Qrr for Better THD and Lower EMI  Low Parasitic Inductance for Reduced Ringing and Lower EMI  Delivers up to 100W per Channel into 8 with No Heatsink  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. RG (typical) Qg (typical) 100V 51m 62m 3.5 8.
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