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AUIRF4104S - Power MOSFET

Download the AUIRF4104S datasheet PDF. This datasheet also covers the AUIRF4104 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF4104-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF4104S Power MOSFET International Rectifier
AUIRF4104 Power MOSFET International Rectifier
AUIRF4905 Power MOSFET International Rectifier
AUIRF4905L Power MOSFET International Rectifier
AUIRF4905S Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRF4104 Power MOSFET
AUIRF4905 Power MOSFET
AUIRF4905L Power MOSFET
AUIRF4905S Power MOSFET
AUIRF1010EZ Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRF4104 AUIRF4104S Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.