Datasheet4U Logo Datasheet4U.com

AUIRF3205ZS - Power MOSFET

Download the AUIRF3205ZS datasheet PDF. This datasheet also covers the AUIRF3205Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS HEXFET® Power MOSFET 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF3205Z-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF3205ZS HEXFET Power MOSFET International Rectifier
AUIRF3205Z HEXFET Power MOSFET International Rectifier
AUIRF3205 Power MOSFET International Rectifier
AUIRF3004WL Power MOSFET International Rectifier
AUIRF3007 Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRF3205Z Power MOSFET
AUIRF3305 Power MOSFET
AUIRF3315S Power MOSFET
AUIRF3805 Power MOSFET
AUIRF3805L Power MOSFET

Full PDF Text Transcription

Click to expand full text
  AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS HEXFET® Power MOSFET 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Published: |