6EDL04N02PR Datasheet - Infineon

6EDL04N02PR 200V and 600V three-phase gate driver

The device 6ED family * 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor .

6EDL04N02PR Features

* Infineon thin-film-SOI-technology

* Maximum blocking voltage +600 V

* Output source/sink current +0.165 A/-0.375 A

* Integrated ultra-fast, low RDS(ON) Bootstrap Diode

* Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology

* S

6EDL04N02PR Datasheet (1.12 MB)