35CN10N - Power-Transistor

Infineon

Datasheet Details

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Jan 18, 2019 |