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1EDI3050AS - Single channel isolated IGBT/SiC-MOSFET driver

1EDI3050AS Description

EiceDRIVER™ gate driver 1EDI3050AS Single channel isolated IGBT/SiC-MOSFET driver .

1EDI3050AS Features

* Single channel isolated IGBT/SiC driver using coreless transformer technology
* For IGBTs/SiC-MOSFETs up to 1200 V
* Integrated SPI
* CMTI up to 150 V/ns up to 1000 V
* Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10

1EDI3050AS Applications

* Traction inverters for HEV and EV
* High power DC/DC converter Product validation Qualified for automotive applications. Product validation according to AEC-Q100. Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document www. infineon. com/is

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Single channel isolated IGBT SiC-MOSFET driver Infineon
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