Datasheet4U.com

1ED2127S65F

The 1ED2127S65F is 650V high-side gate driver designed by Infineon.

Product Overview

Infineon

📥 Download Datasheet

1ED2127S65F 650V high-side gate driver by Infineon - Datasheet Preview — Datasheet preview – 1ED2127S65F

Datasheet Details

Part number	1ED2127S65F
Manufacturer	Infineon
File Size	673.68 KB
Description	650V high-side gate driver
Datasheet	1ED2127S65F-Infineon.pdf
Additional preview pages of the 1ED2127S65F datasheet.

Product details

Description

The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.

Features

Infineon thin-film-SOI-technology.
Maximum blocking voltage +650 V.
Output source/sink current +4 A/ -4 A.
Maximum supply voltage of 25 V.
Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
Negative VS transient immunity of 100 V.
Detection of over current and under voltage supply.
Multi-function RCIN/Fault/Enable (RFE) with programmable fault clear time.
Less than 100 ns propagation delay.
DSO-8 package.

📁 Similar Datasheet

Other Datasheets by Infineon

1ED21271S65F - 650V high-side gate driver
1ED21471S65F - 650V high-side gate driver
1ED2147S65F - 650V high-side gate driver
1ED020I12-B2 - Single channel isolated gate driver
1ED020I12-BT - Single channel isolated gate driver
1ED020I12-F - Single IGBT Driver

Published: Apr 16, 2025 |