Description
1
gate 2
drain 3
source
TO-247 HCC
3Pin
2021-10-27
restricted Copyright © Infineon T
Type IMWH170R450M1
Package PG-TO247-3-STD-NN4.8
Marking 170M1450
Datasheet www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00 2024-03-25
IMWH170R450M1
CoolSiC™ 1700 V SiC Trench MOSFET
Table of contents
Table of contents
Description
Features
- VDSS = 1700 V at Tvj = 25°C.
- IDDC = 10 A at TC = 25°C.
- RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C.
- Optimized for fly-back topologies.
- 12 V / 0 V gate-source voltage compatible with most fly-back controllers.
- Very low switching losses.
- Benchmark gate threshold voltage, VGS(th) = 4.5 V.
- Fully controllable dv/dt for EMI optimization.
- . XT interconnection technology for best-in-class thermal performance
Potential applic.
170M1450-Infineon.pdf
