12M1H060 1200V SiC Trench MOSFET

Infineon

12M1H060 Description

IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET .

12M1H060 Features

* Very low switching losses
* Threshold-free on state characteristic
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body diode for hard commutation
* Temperature independent

12M1H060 Applications

* Energy generation o Solar string inverter and solar optimizer
* Industrial power supplies o Industrial UPS o Industrial SMPS
* Infrastructure
* Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: t

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Datasheet Details

Part number: 12M1H060
Manufacturer: Infineon ↗
File Size: 1.20 MB
Datasheet: 12M1H060-Infineon.pdf
Description: 1200V SiC Trench MOSFET

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1200V SiC Trench MOSFET Infineon

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