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SPB80P06P Power Transistor

SPB80P06P Description

SPB80P06P G SIPMOS® Power-Transistor .

SPB80P06P Features

* Product Summary
* P-Channel
* Enhancement mode
* Avalanche rated
* dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A
* 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halo

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Power Transistor Infineon Technologies
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