SIGC81T120R2C Datasheet (Infineon Technologies)

SIGC81T120R2C, IGBT

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

SIGC81T120R2C Features

* 1200V NPT technology 200µm chip

* low turn-off losses

* positive temperature coefficient

* easy paralleling

* integrated gate resistor This chip is used for:

* power module BSM 50GD120DN2 Applications:

* drives C G E Chip Type SIGC81T12