SIGC25T120C Datasheet (Infineon Technologies)

SIGC25T120C, IGBT

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All R

SIGC25T120C Features

* 1200V NPT technology

* 200µm chip

* positive temperature coefficient

* easy paralleling This chip is used for:

* BUP 213 C Applications:

* drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code C