IPD25CN10NG - Power-Transistor

Infineon Technologies

Datasheet Details

Part number	IPD25CN10NG
Manufacturer	Infineon Technologies
File Size	1.01 MB
Description	Power-Transistor
Datasheet	IPD25CN10NG-InfineonTechnologies.pdf

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: May 20, 2015 |