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IPB057N06N Power-Transistor

IPB057N06N Description

Type OptiMOSTM Power-Transistor .

IPB057N06N Features

* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level

IPB057N06N Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V. .10V) IPB057N06N 60 V 5.7 mW 45 A 32 nC 27 nC PG-TO263-3 Type IPB057N06N Package PG-TO263-3 Marking 057N06N Maximum ratings, at T j=25 °C, unless othe

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Power-Transistor Infineon Technologies
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