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IKW75N65EL5 - IGBT

Infineon Technologies

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Datasheet Details

Part number	IKW75N65EL5
Manufacturer	Infineon ↗ Technologies
File Size	1.70 MB
Description	IGBT
Datasheet	IKW75N65EL5-InfineonTechnologies.pdf

IKW75N65EL5 Product details

Description

. . .

Features

C Low VCE(sat) L5 technology offering.
Very low collector-emitter saturation voltage VCEsat.
Best-in-Class tradeoff between conduction and switching losses.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

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Published: Feb 7, 2015 |