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IDH12SG60C - Schottky Diode

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Switching behavior benchmark.
  • No reverse recovery / No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH12SG60C 600 V 19 nC 12 A thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.
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