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IDD06SG60C Schottky Diode

IDD06SG60C Description

3rd Generation thinQ!TM SiC Schottky Diode .

IDD06SG60C Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery / No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant

IDD06SG60C Applications

* Breakdown voltage tested at 20mA2)
* Optimized for high temperature operation
* Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C thinQ! 3G Diode designed for fast switching applications like:
* SMPS e. g. ; CCM PFC
* Motor Drives; Solar App

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Schottky Diode Infineon Technologies
Infineon Technologies IDD06SG60C-like datasheet