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at • N-Channel .D w • Enhancement mode w • Logic Level
Features • dv/dt rated
SIPMOS ® Small-Signal-Transistor
Product Summary Drain source voltage Continuous drain current
h S a
ee
U 4 t
m o .c
Preliminary data
BSP308
VDS ID
4
30 0.05 4.7
V Ω A
Drain-Source on-state resistance RDS(on)
Type BSP308
Package SOT-223
Ordering Code Q67000-S4011
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
T A = 25 °C T A = 70 °C
Pulsed drain current
T A = 25 °C
Reverse diode dv/dt
I S = 4.7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C
Gate source voltage Power dissipation
w
w
w
t a .D
S a
e h
ID
U 4 t e
.c
G
m o
2 1
3
VPS05163
Pin 1
Pin 2/4 D
PIN 3 S
Value 4.7 3.9
Unit A
ID puls
dv/dt
18.
BSP308 Datasheet
