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BSC077N12NS3G - MOSFET

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC077N12NS3G MOSFET OptiMOSTM3Power-Transistor,120V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 7.7 mΩ ID 98 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC077N12NS3 G Package PG-TDSON-8 Marking 077N12NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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