BGB540 Datasheet (Infineon Technologies AG) - Active Biased RF Transistor

BGB540, Active Biased RF Transistor

and charts stated herein.

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Data sheet, BGB540, Sept.

2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g .

Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002.

Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby di

BGB540 Features

* Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications

* For high gain low noise amplifiers

* Ideal