BFR181T Datasheet (Infineon Technologies AG)

BFR181T, NPN Silicon RF Transistor

BFR181T NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR181T Maximum Ratings Parameter Marking RFs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 20 2 175 150 mW °C mA Unit V Collector-emitter voltage Colle