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BF543 - Silicon N-Channel MOSFET Triode

BF543 Description

BF543 Silicon N-Channel MOSFET Triode  For high-frequency stages up to 300 MHz 3 preferably in FM applications  IDSS = 4mA, g fs = 12mS 2 1 VPS05.

BF543 Applications

*  IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID Value 20 30 10 200 -55 150 -55 15

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Silicon N-Channel MOSFET Triode Infineon Technologies AG
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