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3DD301B - Silicon Power Transistor

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Datasheet Details

Part number 3DD301B
Manufacturer Inchange
File Size 202.55 KB
Description Silicon Power Transistor
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3DD301B Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications.

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