Datasheet Details
| Part number | MJ3738 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.40 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 MJ3738 Datasheet
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| Part number | MJ3738 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.40 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
MJ3738 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) High Switching Speed APPLICATIONS Designed for high voltage switching and amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~20
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