MDD1903RH - N-Channel MOSFET Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	MDD1903RH
Manufacturer	Inchange Semiconductor
File Size	287.15 KB
Description	N-Channel MOSFET Transistor
Datasheet	MDD1903RH Datasheet
Additional preview pages of the MDD1903RH datasheet.

Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12.8 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 36.8 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Ju

Features

Drain Current : ID= 12.8A@ TC=25℃.
Drain Source Voltage : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

MDD1903 - Single N-channel MOSFET (MagnaChip)
MDD1901 - Single N-channel Trench MOSFET (MagnaChip)
MDD1902 - Single N-channel MOSFET (MagnaChip)
MDD1904 - Single N-channel MOSFET (MagnaChip)
MDD1951 - N-Channel MOSFET (MagnaChip)
MDD1951RH - N-Channel MOSFET (MagnaChip)
MDD1051 - Single N-channel MOSFET (MagnaChip)
MDD1051RH - N-Channel MOSFET (INCHANGE)

Other Datasheets by Inchange Semiconductor

Published: Aug 7, 2022 |