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MBRF10H150CT - Schottky Barrier Rectifier

Features

  • Schottky barrier chip.
  • Low Power Loss,High Efficiency.
  • Guard ring for transient protection.
  • High Operating Junction Temperature.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBRF10H150CT FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 150 V 10 A Nonrepetitive Peak Surge Current IFSM 8.
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