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MBR2060 - Schottky Barrier Rectifier

Features

  • Metal of silicon rectifier, majonty carrier conduction.
  • Guard ring for transient protection.
  • Low power loss high efficiency.
  • High Surge Capability,High Current Capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR2060 FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MAXIMUN RATINGS ·Operating Temperature: -55C to +150C ·Storage Temperature: -55C to +150C ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 135℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 60 42 20 150 V V A
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