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KTC1003 - Silicon NPN Power Transistors

Description

Large Collector Current Capability- : IC= 4A (Max) Collector Power Dissipation- : PC= 30W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T

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isc Silicon NPN Power Transistor DESCRIPTION ·Large Collector Current Capability- : IC= 4A (Max) ·Collector Power Dissipation- : PC= 30W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTC1003 isc website：www.iscsemi.
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