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KTB2510 - Silicon PNP Power Transistors

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Datasheet Details

Part number KTB2510
Manufacturer Inchange Semiconductor
File Size 146.19 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet KTB2510-InchangeSemiconductor.pdf

KTB2510 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V Complement to Type KTD1510 APPLICATIONS High power amplifier applications Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

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