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KSD560 - Silicon NPN Power Transistor

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Part number KSD560
Manufacturer Inchange Semiconductor
File Size 190.92 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD560 Datasheet
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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 3.0A Low Saturation Voltage Complement to Type KSB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100

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