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KSC5028 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : V(BR)CBO= 1100V(Min) Fast Switching speed Wide Area of Safe Operation High Reliability APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5028 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 80 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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