IRFP343R - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	IRFP343R
Manufacturer	Inchange Semiconductor
File Size	237.08 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFP343R-InchangeSemiconductor.pdf

IRFP343R Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 350 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 125 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current.
ID= 8A@ TC=25℃.
Drain Source Voltage- : VDSS= 350V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Aug 8, 2016 |