IRF841FI - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	IRF841FI
Manufacturer	Inchange Semiconductor
File Size	60.02 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRF841FI-InchangeSemiconductor.pdf

IRF841FI Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 V V ID Drain Current-Continuous 4.5 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistan

Features

Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Rugged Gate Oxide Technology.

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Published: Aug 4, 2016 |