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IRF4905 - P-Channel MOSFET Transistor

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source

Features

  • Static drain-source on-resistance: RDS(on)≤0.02Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor IRF4905,IIRF4905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.02Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -74 IDM Drain Current-Single Pulsed -260 PD Total Dissipation @TC=25℃ 200 Tj Max.
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